amplifiers and high energy pulse circuits. Part Number. IRF IRF N.I Semi-Conductors encourages customers to verify that datasheets are current. IRF datasheet, IRF pdf, IRF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, A, V, Ohm, N-Channel Power MOSFET. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power.

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IRF Datasheet(PDF) – Vishay Siliconix

The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.


Products may be manufactured at one of several qualified locations. For example, parts with lead Pb terminations are not RoHS-compliant.

IRF MOSFET Datasheet pdf – Equivalent. Cross Reference Search

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Gate-to-Source Voltage Document Number: No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

Please note that some Vishay documentation may still make reference to the IEC definition. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

C, Dec Document Number: Repetitive rating; pulse width limited by maximum junction temperature see fig.

IRF720 Datasheet PDF

The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Product names and markings noted herein may be trademarks of their respective owners.


C, Dec 0 10 5 Ciss Fig. Such statements are not binding statements about the suitability of products for a particular application.

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